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NTE353

NTE
Part Number NTE353
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE353 Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz Description: The NTE353 is designed for 12.5 Volt VHF lar...
Datasheet PDF File NTE353 PDF File

NTE353
NTE353

Overview
NTE353 Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz Description: The NTE353 is designed for 12.
5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz.
Features: D Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggedness.
D Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities D Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink.
D Exceptional Power Output Stability versus Temperature.
Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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18V Collector–Base Voltage, VCBO .
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36V Emitter–Base Voltage, VEBO .
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