MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR Module>
ARY N I M I PREL
tion. ang e. ifica h l sp ec ct to c a fina are su bje t o n is its is m h li T e: tric Notice parame So m
PS12017-A PS12017-A
FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED TYPE TYPE
PS12017-A
INTEGRATED FUNCTIONS AND FEATURES
• 3-Phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technologies. • Circuit for dynamic braking of motor regenerative energy. • Inverter output current capability Io (Note 1) : Type Name PS12017-A 100% load 7. 2A (rms) 150% over load 10. 8A (rms), 1min
(Note 1) : The...