N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Description
ISL9N302AP3
January 2002
ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and al...
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