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NE25139

Part Number	NE25139
Manufacturer	NEC
Description	DUAL-GATE GaAS MESFET
Published	May 12, 2005
Detailed Description	GENERAL PURPOSE DUAL-GATE GaAS MESFET NE25139 Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB) FEATURES • SUIT...
Datasheet	NE25139 PDF File

Overview

GENERAL PURPOSE DUAL-GATE GaAS MESFET NE25139 Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB) FEATURES • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.
02 pF (TYP) • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.
1 dB TYP AT 900 MHz • LG1 = 1.
0 µm, LG2 = 1.
5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK DESCRIPTION The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier.
As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs.
This device is available in a mini-mold (surface mount) package.
POWER GAIN AND NOI...

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