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NE32400

Part Number	NE32400
Manufacturer	NEC
Description	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Published	May 12, 2005
Detailed Description	DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL H...
Datasheet	NE32400 PDF File

Overview

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons.
Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.
FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.
6 dB TYP.
, Ga = 11.
0 dB TYP.
at f = 12 GHz • Gate Length : Lg = 0.
25 µm • Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32400 NE24200 Standard (Grade D) Grade C and B (B is special order) QU...

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