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NE33284A

NEC
Part Number NE33284A
Manufacturer NEC
Description L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Published May 12, 2005
Detailed Description DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DE...
Datasheet PDF File NE33284A PDF File

NE33284A
NE33284A

Overview
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems.
L 1.
78 ±0.
2 1 PACKAGE DIMENSIONS (Unit: mm) FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.
35 dB TYP.
, Ga = 15.
0 dB TYP.
at f = 4 GHz • Gate Width: Wg = 280 µm 1.
78 ±0.
2 L U 2 L 3 L 4 ORDERING INFORMATION SUPPLYING FORM STICK Tape & reel PART NUMBER NE33284A-SL NE33284A-T1 NE33284A-T1A LEAD LENGTH L = 1.
0 ±0.
2 mm ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.
0 –3.
0 IDSS 165 150 –65 to +150 V mA mW ˚C ˚C 1.
Source 2.
Drain 3.
Source 4.
Gate RECOMMENDED OPERATING CONDITION (TA = 25 ˚C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN.
TYP.
2 10 MAX.
3 20 0 Unit V mA dBm Document No.
P10874EJ2V0DS00 (2nd edition) (Previous No.
TD-2369) Date Published October 1995 P Printed in Japan © 0.
1 V 1.
7 MAX.
L = 1.
7 mm MIN.
0.
5 TYP.
0.
5 TYP.
1995 NE33284A ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure SYMBOL IGSO IDSS VGS(off) gm NF 15 –0.
2 45 MIN.
TYP.
0.
5 40 –0.
8 70 0.
75 0.
35 Associated Gain Ga 9.
5 13.
0 10.
5 15.
0 1.
0 0.
45 dB MAX.
10 80 –2.
0 UNIT TEST CONDITIONS VGS = –3 V VDS = 2 V, VGS = 0 VDS = 2 V, ID = 100 µA VDS = 2 V, ID = 10 mA f = 12 GHz f = 4 GHz f = 12 GHz f = 4 GHz VDS = 2 V ID = 10 mA µA mA V mS dB PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with AlGaAs shottky barrier gate.
2 NE33284A TYPICAL CHARACTERISTICS (TA =...


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