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NE52118

NEC
Part Number NE52118
Manufacturer NEC
Description L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
Published May 12, 2005
Detailed Description PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FE...
Datasheet PDF File NE52118 PDF File

NE52118
NE52118

Overview
PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.
0 dB TYP.
Ga = 15.
0 dB TYP.
MSG = 15.
0 dB TYP.
(@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP.
(@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) • 4-pin super minimold package • Grounded Emitter Transistor ORDERING INFORMATION (PLAN) Part Number NE52118-T1 Package 4-pin super minimold Marking V41 Supplying Form Embossed tape 8 mm wide.
Pin 3, pin 4 face to perforation side of the tape.
Qty 3 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE52118) ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Ratings 5.
0 3...


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