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NZT6729

Fairchild Semiconductor
Part Number NZT6729
Manufacturer Fairchild Semiconductor
Description PNP General Purpose Amplifier
Published May 13, 2005
Detailed Description TN6729A / NZT6729 Discrete POWER & Signal Technologies TN6729A NZT6729 C E C C TO-226 BE B SOT-223 PNP General P...
Datasheet PDF File NZT6729 PDF File

NZT6729
NZT6729

Overview
TN6729A / NZT6729 Discrete POWER & Signal Technologies TN6729A NZT6729 C E C C TO-226 BE B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA.
Sourced from Process 79.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 80 80 5.
0 1.
0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN6729A 1.
0 8.
0 50 125 Max *NZT6729 1.
0 8.
0 125 Units W mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.
5 mm; mounting pad for the collector lead min.
6 cm2.
© 1997 Fairchild Semiconductor Corporation TN6729A / NZT6729 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 1.
0 mA, IB = 0 I C = 100 µA, I E = 0 I E = 1.
0 mA, IC = 0 VCB = 60 V, IE = 0 VEB = 5.
0 V, IC = 0 80 80 5.
0 0.
1 10 V V V µA µA ON CHARACTERISTICS* hFE DC Current Gain I C = 50 mA, VCE = 1.
0 V I C = 250 mA, VCE = 1.
0 V I C = 500 mA, VCE = 1.
0 V I C = 250 mA, IB...


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