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S858TA3

Vishay Telefunken
Part Number S858TA3
Manufacturer Vishay Telefunken
Description BIPMIC - Cascadable Silicon Bipolar Amplifier
Published May 17, 2005
Detailed Description S858TA3 Vishay Telefunken BIPMIC® – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precau...
Datasheet PDF File S858TA3 PDF File

S858TA3
S858TA3

Overview
S858TA3 Vishay Telefunken BIPMIC® – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device.
Observe precautions for handling.
Applications General purpose 50 W gain block for narrow and broad band IF and RF amplifiers in commercial and industrial applications.
The 50 W level allows directly to cascade this amplifier with minimal external circuitry, thus providing a simple, cost effective way to achieve low level amplification.
Features D D D D Broadband amplification Low operating voltage (6 V) 50 W cascadable gain block High gain (17.
5 dB @900 MHz) D Low noise figure (3.
3 db @900 Mhz) D Low cost surface mount plastic package D Few external components 2 1 94 9279 13 579 3 4 S858TA3 Marking: TA3 Plastic case (SOT 143) 1 = RF-output, 2 = Ground, 3 = RF-input, 4 = Ground Typical biasing configuration Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Device current RF input power Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol Ibias Pin Ptot Tj Tstg Value 35 20 200 150 –65 to +150 Unit mA dBm mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.
5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 85054 Rev.
3, 20-Jan-99 www.
vishay.
de • FaxBack +1-408-970-5600 1 (3) S858TA3 Vishay Telefunken Electrical AC Characteristics Ibias = 29 mA, f = 900 MHz , Z0 = 50 W, Tamb = 25_C, unless otherwise specified Parameter Power gain 3 dB bandwidth Input VSWR Output VSWR Noise figure Intermodulation distortion Output power @1dB gain compression Device voltage Test Conditions Symbol Gp f3dB VSWR VSWR F IM3 P–1dB Vd Min 17 Typ 17.
5 0.
5 1.
8:1 1.
8:1 3.
3 50 10 3.
6 Max Unit dB GHz f = 0.
1 to 2.
5 GHz f = 0.
1 to 2.
5 GHz f = 900 MHz 22.
5 mV input voltage 2.
9 4.
3 dB dB dBm V Dimensions of S858TA3 in mm 96 12240 www.
vishay.
de • FaxBack +1-408-970...


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