28LV64A
64K (8K x 8) Low Voltage CMOS EEPROM
FEATURES
2.7V to 3.6V Supply Read Access Time—300 ns CMOS Technology for Low Power Dissipation - 8 mA Active - 50 µA CMOS Standby Current Byte Write Time—3 ms Data Retention >200 years High Endurance - Minimum 100,000 Erase/Write Cycles Automatic Write Operation - Internal Control Timer - Auto-Clear ...
