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T410

ST Microelectronics
Part Number T410
Manufacturer ST Microelectronics
Description 4A TRIACS
Published Jun 1, 2005
Detailed Description ® T4 Series 4A TRIACS SNUBBERLESS™ & LOGIC LEVEL MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGTT (Q1) Value 4 600 to 800...
Datasheet PDF File T410 PDF File

T410
T410

Overview
® T4 Series 4A TRIACS SNUBBERLESS™ & LOGIC LEVEL MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGTT (Q1) Value 4 600 to 800 5 to 35 Unit A V A2 G A2 A1 A2 mA A1 A2 G A1 A2 G DESCRIPTION Based on ST’s Snubberless / Logic level technology providing high commutation performances, the T4 series is suitable for use on AC inductive loads.
They are recommended for applications using universal motors, electrovalves.
.
.
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such as kitchen aid equipments, power tools, dishwashers,.
.
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Available in a fully insulated package, the T4.
.
.
-.
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.
W version complies with UL standards (ref.
E81734).
DPAK (T4-B) IPAK (T4-H) A2 A1 A2 G A1 A2 G TO-220AB (T4-T) ISOWATT 220AB (T4-W) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) Parameter RMS on-state current (full sine wave) DPAK / IPAK TO-220AB ISOWATT 220AB ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range F = 50 Hz F = 60 Hz Tc = 110°C 4 Tc = 105°C t = 20 ms t = 16.
7 ms 30 31 5.
1 Tj = 125°C Tj = 125°C Tj = 125°C 50 4 1 - 40 to + 150 - 40 to + 125 A² s A/µs A W °C A Value Unit A I ²t dI/dt IGM PG(AV) Tstg Tj tp = 10 ms F = 120 Hz tp = 20 µs June 2003 - Ed: 5 1/8 T4 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions Quadrant T405 IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V RL = 30 Ω I - II - III I - II - III I - II - III MAX.
MAX.
MIN.
MAX.
I - III II VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C Tj = 125°C Tj = 125°C (dV/dt)c = 10 V/µs Without snubber MIN.
MIN.
(dI/dt)c (2) (dV/dt)c = 0.
1 V/µs MAX.
10 10 15 20 1.
8 0.
9 5 T4 T410 10 1.
3 0.
2 15 25 30 40 2.
7 2.
0 35 50 60 400 2.
5 V/µs A/ms T435 35 mA V V mA mA Unit VD = VDRM RL = 33 kΩ Tj = 125°C IT = 100 mA IG = 1.
2 IGT STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IGT i...


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