DatasheetsPDF.com

FLL107ME

Eudyna Devices
Part Number FLL107ME
Manufacturer Eudyna Devices
Description L-BAND MEDIUM & HIGH POWER GAAS FET
Published Jun 7, 2005
Detailed Description FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=1...
Datasheet PDF File FLL107ME PDF File

FLL107ME
FLL107ME

Overview
FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.
5dBm (Typ.
) High Gain: G1dB=13.
5dB (Typ.
) High PAE: ηadd=47% (Typ.
) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.
The performance in multitone environments for Class AB operation make them ideally suited for base station applications.
This device is assembled in hermetic metal/ceramic package.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Pt Tstg Tch Tc = 25°C Condition Rating 15 -5 4.
16 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)