STK22N06
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STK22N06
s s s s s s s s
V DSS 60 V
R DS( on) < 0.065 Ω
ID 22 A
TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
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