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KMM366S403CTL

Samsung
Part Number KMM366S403CTL
Manufacturer Samsung
Description PC66 SDRAM MODULE
Published Jun 23, 2005
Detailed Description KMM366S403CTL Revision History Revision .3 (Mar. 1998) PC66 SDRAM MODULE •Some Parameter values & Characteristics of c...
Datasheet PDF File KMM366S403CTL PDF File

KMM366S403CTL
KMM366S403CTL

Overview
KMM366S403CTL Revision History Revision .
3 (Mar.
1998) PC66 SDRAM MODULE •Some Parameter values & Characteristics of comp.
level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA.
- Input leakage currents (I/O) : ±5uA to ±1.
5uA.
- Cin to be measured at VDD = 3.
3V, TA = 23°C, f = 1MHz, VREF = 1.
4V ± 200mV.
- AC Operating Condition is changed as defined : VIH(max) = 5.
6V AC.
The overshoot voltage duration is≤ 3ns.
VIL(min) = -2.
0V AC.
The undershoot voltage duration is≤ 3ns.
REV.
3 Mar.
'98 KMM366S403CTL KMM366S403CTL SDRAM DIMM PC66 SDRAM MODULE 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.
3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM366S403CTL...


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