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IRG4BC30W-S

International Rectifier
Part Number IRG4BC30W-S
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jul 27, 2005
Detailed Description PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and...
Datasheet PDF File IRG4BC30W-S PDF File

IRG4BC30W-S
IRG4BC30W-S

Overview
PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C VCES = 600V G E VCE(on) typ.
= 2.
10V @VGE = 15V, IC = 12A n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topolog...


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