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IRFS4710

IRF
Part Number IRFS4710
Manufacturer IRF
Description Power MOSFET
Published Aug 16, 2005
Detailed Description PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Motor Contr...
Datasheet PDF File IRFS4710 PDF File

IRFS4710
IRFS4710

Overview
PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l VDSS 100V RDS(on) max 0.
014Ω ID 75A TO-220AB IRFB4710 D2Pak IRFS4710 TO-262 IRFSL4710 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max.
75 53 300 3.
8 200 1.
4 ± 20 8.
2 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Notes  through ‡ Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ are on page 11 Typ.
––– 0.
50 ––– ––– Max.
0.
74 ––– 62 40 Units °C/W www.
irf.
com 1 3/16/01 IRFB/IRFS/IRFL4710 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
100 ––– ––– 3.
5 ––– ––– ––– ––– Typ.
––– 0.
11 0.
011 ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.
014 Ω VGS = 10V, ID = 45A „ 5.
5 V VDS = VGS, ID = 250µA 1.
0 VDS = 95V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specif...


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