Advanced Power MOSFET
Description
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 Ω (Typ.)
1
IRFS840A
BVDSS = 500 V RDS(on) = 0.85 Ω ID = 4.6 A
TO-220F
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Rati...
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