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IRFSL41N15D

IRF
Part Number IRFSL41N15D
Manufacturer IRF
Description HEXFET Power MOSFET
Published Aug 16, 2005
Detailed Description PD - 93804B Applications l High frequency DC-DC converters HEXFET® Power MOSFET IRFB41N15D IRFIB41N15D IRFS41N15D IR...
Datasheet PDF File IRFSL41N15D PDF File

IRFSL41N15D
IRFSL41N15D


Overview
PD - 93804B Applications l High frequency DC-DC converters HEXFET® Power MOSFET IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D VDSS RDS(on) max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) Fully Characterized Avalanche Voltage and Current 150V 0.
045: ID 41A TO-220AB TO-220 FullPak D2Pak TO-262 IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Absolute Maximum Ratings Parameter ID @ TC = 25°C IDM PD @TA = 25°C PD @TC = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Max.
41 29 164 3.
1 200 48 1.
3 0.
32 ± 30 2.
7 -55 to + 175 Units A W c Power Dissipation, D Pak Power Dissipation, TO-220 Power Dissipation, Fullpak Linear Derating Factor, TO-220 Linear Derating Factor, Fullpak 2 W/°C V V/ns °C VGS dv/dt TJ TSTG Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and e Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.
6mm from case ) 1.
1(10) N•m (lbf•in) Thermal Resistance Parameter RθJC RθJC Rθcs RθJA RθJA RθJA Junction-to-Case Junction-to-Case, Fullpak Case-to-Sink, Flat, Greased Surface Typ.
––– ––– 0.
50 ––– ––– ––– Max.
0.
75 3.
14 ––– 62 40 65 Units °C/W h Junction-to-Ambient, D Pak i Junction-to-Ambient, TO-220 2 h Junction-to-Ambient, Fullpak Notes  through ‡ are on page 12 www.
irf.
com 1 07/16/03 IRFB/IRFIB/IRFS/IRFSL41N15D Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units 150 ––– ––– 3.
0 ––– ––– ––– ––– ––– 0.
17 ––– ––– ––– ––– ––– ––– ––– ––– 0.
045 5.
5 25 250 100 -100 nA...


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