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IRGP420U

IRF
Part Number IRGP420U
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 23, 2005
Detailed Description Previous Datasheet Index Next Data Sheet PD - 9.781A IRGP420U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching...
Datasheet PDF File IRGP420U PDF File

IRGP420U
IRGP420U

Overview
Previous Datasheet Index Next Data Sheet PD - 9.
781A IRGP420U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) C UltraFast IGBT VCES = 500V G E See Fig.
1 for Current vs.
Frequency curve VCE(sat) ≤ 3.
0V @VGE = 15V, I C = 7.
5A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC Absolute M...


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