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IRGP20B120U-E

IRF
Part Number IRGP20B120U-E
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 23, 2005
Detailed Description PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 ...
Datasheet PDF File IRGP20B120U-E PDF File

IRGP20B120U-E
IRGP20B120U-E

Overview
PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package UltraFast IGBT C VCES = 1200V G E VCE(on) typ.
= 3.
05V VGE = 15V, IC = 20A, 25°C Benefits • Benchmark efficiency above 20KHz • Optimized for Welding, UPS, and Induction Heating applications • Rugged with UltraFast performance • Low EMI • Significantly Less Snubber required • Excellent Current sharing in Parallel operation • Longer leads for easier mounting n-channel TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EAS @ TC =25°C Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.
1) Continuous Collector Current (Fig.
1) Pulsed Collector Current (Fig.
3, Fig.
CT.
5) Clamped Inductive Load Current(Fig.
4, Fig.
CT.
2) Gate-to-Emitter Voltage Avalanche Energy, single pulse IC = 25A, VCC = 50V, RGE = 25ohm L = 200µH (Fig.
CT.
6) Maximum Power Dissipation (Fig.
2) Maximum Power Dissipation (Fig.
2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
1200 40 20 120 120 ± 20 65 Units V A V mJ PD @ TC = 25°C PD @ TC = 100°C TJ TSTG 300 120 -55 to + 150 300, (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1N•m) W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt ZθJC Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Transient Thermal Impedance Junction-to-Case Min.
––– ––– ––– ––– (Fig.
18) Typ.
––– 0.
24 ––– 6 (0.
21) Max.
0.
42 ––– 40 ––– Units °C/W g (oz) www.
irf.
com 1 03/06/01 IRGP20B120U-E Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage ∆V(BR)CES / ∆Tj Temperature Coeff.
of Breakdown Voltage Min.
1200 Typ.
+1.
2 3.
05 3.
37 4.
23 3.
89 4.
31 5.
0 - 1.
2 15.
7 Collecto...


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