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IRGPC40S

IRF
Part Number IRGPC40S
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 23, 2005
Detailed Description Previous Datasheet Index Next Data Sheet PD - 9.692A IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Features • Switching...
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IRGPC40S
IRGPC40S

Overview
Previous Datasheet Index Next Data Sheet PD - 9.
692A IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400Hz) See Fig.
1 for Current vs.
Frequency curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 1.
8V @VGE = 15V, IC = 31A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage ...


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