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IRG4BC20UD-S

IRF
Part Number IRG4BC20UD-S
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 23, 2005
Detailed Description PD- 94077 IRG4BC20UD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optim...
Datasheet PDF File IRG4BC20UD-S PDF File

IRG4BC20UD-S
IRG4BC20UD-S

Overview
PD- 94077 IRG4BC20UD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ.
= 1.
85V @VGE = 15V, IC = 6.
5A N-channel Benefits • Generation 4 IGBTs offers highest efficiencies available • Optimized for specific application conditions • HEXFRED diodes ...


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