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IRG4BC20K-S

IRF
Part Number IRG4BC20K-S
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 23, 2005
Detailed Description PD - 91620A IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor cont...
Datasheet PDF File IRG4BC20K-S PDF File

IRG4BC20K-S
IRG4BC20K-S

Overview
PD - 91620A IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ.
= 2.
27V @VGE = 15V, IC = 9.
0A n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls po...


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