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0809LD30

Part Number	0809LD30
Manufacturer	GHZ Technology
Description	30 Watt / 28V / 1 Ghz LDMOS FET
Published	Aug 24, 2005
Detailed Description	R.0.2P.991602-BEHRE 0809LD30 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30 is a com...
Datasheet	0809LD30 PDF File

Overview

R.
0.
2P.
991602-BEHRE 0809LD30 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz.
The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness.
CASE OUTLINE 55QT Common Source ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25°C (Pd) Thermal Resistance (θJC) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 110 W 1.
6°C/W 65V ±20V -65 to +200°C +200°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL ΒVdss Idss ...

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