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STD1LNC60

Part Number	STD1LNC60
Manufacturer	ST Microelectronics
Description	N-CHANNEL POWER MOSFET
Published	Aug 28, 2005
Detailed Description	N-CHANNEL 600V - 12Ω - 1A - IPAK/DPAK PowerMESH™II MOSFET TYPE STD1LNC60 s s s s s STD1LNC60 VDSS 600 V RDS(on) < 15 ...
Datasheet	STD1LNC60 PDF File

Overview

N-CHANNEL 600V - 12Ω - 1A - IPAK/DPAK PowerMESH™II MOSFET TYPE STD1LNC60 s s s s s STD1LNC60 VDSS 600 V RDS(on) < 15 Ω ID 1A TYPICAL RDS(on) = 12 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED IPAK TO-251 3 2 1 1 3 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s BATTER CHARGER, ADAPTOR AND STANDBY POWER SUPPLY s DPAK TO-252 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Curre...

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STD1LNC60 N-CHANNEL POWER MOSFET - ST Microelectronics

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