STD17N05 STD17N06
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STD17N05 STD17N06
s s s s s s s s
V DSS 50 V 60 V
R DS( on) < 0.085 Ω < 0.085 Ω
ID 17 A 17 A
s
s
TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLIC...
