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STP80N06-10

ST Microelectronics
Part Number STP80N06-10
Manufacturer ST Microelectronics
Description N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
Published Aug 31, 2005
Detailed Description STP80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP80N06-10 s s...
Datasheet PDF File STP80N06-10 PDF File

STP80N06-10
STP80N06-10

Overview
STP80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP80N06-10 s s s s s s s V DSS 60 V R DS(on) < 0.
010 Ω ID 80 A TYPICAL RDS(on) = 8.
5 mΩ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s PWM MOTOR CONTROL s DC-DC & DC-AC CONVERTER s SYNCROUNOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot dV/dt(1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate...


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