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STP6NC90Z

Part Number	STP6NC90Z
Manufacturer	ST Microelectronics
Description	N-CHANNEL Power MOSFET
Published	Sep 2, 2005
Detailed Description	N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP6NC90Z STP6NC90ZFP STB6...
Datasheet	STP6NC90Z PDF File

Overview

N-CHANNEL 900V - 1.
55Ω - 5.
4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP6NC90Z STP6NC90ZFP STB6NC90Z STB6NC90Z-1 s s STP6NC90Z - STP6NC90ZFP STB6NC90Z - STB6NC90Z-1 VDSS 900 V 900 V 900 V 900 V RDS(on) < 1.
9 < 1.
9 < 1.
9 < 1.
9 Ω Ω Ω Ω ID 5.
4 5.
4 5.
4 5.
4 A A A A 3 1 s s TYPICAL RDS(on) = 1.
55Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE D²PAK 1 3 2 TO-220 TO-220FP 12 3 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj July 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature -- I²PAK (Tabless TO-220) Value STP(B)6NC90Z(-1) 900 900 ± 25 5.
4 3.
43 21 135 1.
08 ±50 3 3 2000 –65 to 150 150 5.
4(*) 3.
43(*) 21 40 0.
32 STP6NC90ZFP Unit V V V A A A W W/°C mA KV V/ns V °C °C (•)Pulse width limited by safe operating area (1)ISD ≤5.
4A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (2).
Limited only by maximum temperature allowed 1/13 STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1 THERMAL DATA TO-220 / D²PAK / I²PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Max...

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STP6NC90Z N-CHANNEL Power MOSFET - ST Microelectronics

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