DatasheetsPDF.com

MOC8204

Fairchild Semiconductor
Part Number MOC8204
Manufacturer Fairchild Semiconductor
Description GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
Published Sep 22, 2005
Detailed Description GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The MOC8204 device consists of a gallium arsenide infrare...
Datasheet PDF File MOC8204 PDF File

MOC8204
MOC8204

Overview
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The MOC8204 device consists of a gallium arsenide infrared emitting diode optically coupled to a high voltage, silicon, phototransistor detector in a standard 6-pin DIP package.
It is designed for high voltage applications and is particularly useful in copy machines and solid state relays.
MOC8204 APPLICATIONS • • • • Copy Machines Interfacing and coupling systems of different potentials and impedances Monitor and Detection Circuits Solid State Relays SCHEMATIC 1 6 2 5 3 NC 4 PIN 1.
ANODE 2.
CATHODE 3.
NO CONNECTION 4.
EMITTER 5.
COLLECTOR 6.
BASE Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Input-Output Isolation Voltage Peak ac Voltage, 60 Hz, 1 Second Duration(1) Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER DC/Average Forward Input Current Forward Current - Peak (Pulse Width = 1µs, 330 pps) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Detector Power Dissipation @ TA = 25°C Derate above 25°C Symbol TSTG TOPR TSOL VISO PD IF IF(pk) PD VCEO VCBO VECO PD Value -55 to +150 -55 to +100 260 for 10 sec 7500 250 2.
94 60 1.
2 120 1.
41 400 400 7 150 1.
76 Units °C °C °C Vac(pk) mW mA A mW mW/°C V V V mW mW/°C  2001 Fairchild Semiconductor Corporation DS300269 3/22/01 1 OF 6 www.
fairchildsemi.
com GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS MOC8204 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.
) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage Reverse Leakage Current Capacitance DETECTOR Collector-Emitter Breakdown Voltage (IC = 1.
0 mA, RBE = 1M!) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Dark Current TA = 25°C TA = 100°C (RBE = 1M!, VCE = 300 V) ICEO — — — — 100 250 nA µA (IC = 100 µA) (IE = 100 µA) Test Conditions (IF = 10 mA) (VR = 6.
0 V) (V = 0,...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)