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IXFR10N100Q

Part Number	IXFR10N100Q
Manufacturer	IXYS Corporation
Description	N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances
Published	Sep 23, 2005
Detailed Description	Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.05 W 1...
Datasheet	IXFR10N100Q PDF File

Overview

Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.
05 W 1.
20 W 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C 12N100 10N100 12N100 10N100 12N100 10N100 Maximum Ratings 1000 1000 ±20 ±30 10 9 48 40 12 10 30 5 250 -55 .
.
.
+150 150 -55 .
.
.
+150 1.
6 mm (0.
063 in.
) from case for ...

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