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JAN2N5038

Part Number	JAN2N5038
Manufacturer	Microsemi Corporation
Description	(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR
Published	Sep 23, 2005
Detailed Description	TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level J...
Datasheet	JAN2N5038 PDF File

Overview

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N5038 90 150 2N5039 75 125 Units Vdc Vdc Vdc Adc Adc W 0 7.
0 5.
0 20 140 -65 to +200 Max.
1.
25 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 800 mW/0C for TC > +250C 0 Unit C/W TO-3* (TO-204AA) *See appendix A for package outline ELECTRICAL CH...

Similar Datasheet

JAN2N5038 (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR - Microsemi Corporation
JAN2N5039 (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR - Microsemi Corporation

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