DatasheetsPDF.com

SUP85N06-05

Vishay Siliconix
Part Number SUP85N06-05
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Sep 24, 2005
Detailed Description SUP/SUB85N06-05 New Product Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on...
Datasheet PDF File SUP85N06-05 PDF File

SUP85N06-05
SUP85N06-05

Overview
SUP/SUB85N06-05 New Product Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.
0052 @ VGS = 10 V 0.
0072 @ VGS = 4.
5 V ID (A) "85 a TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP85N06-05 D S S N-Channel MOSFET Top View SUB85N06-05 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.
1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 "85a "85a "240 "75 280 250c 3.
7 –55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Case Notes a.
Package limited.
b.
Duty cycle v 1%.
c.
See SOA curve for voltage derating.
d.
When mounted on 1” square PCB (FR-4 material).
Document Number: 71113 S-20556—Rev.
C, 22-Apr-02 www.
vishay.
com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.
5 0.
6 Unit _C/W 2-1 SUP/SUB85N06-05 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C VDS = 48 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.
5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.
0044 0.
0059 0.
0052 0.
0072 0.
0085 0.
010 S W 60 V 1 3 "100 1 50 250 A mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Cap...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)