DatasheetsPDF.com

BC847CDXV6T1

ON Semiconductor
Part Number BC847CDXV6T1
Manufacturer ON Semiconductor
Description Dual General Purpose Transistors
Published Sep 24, 2005
Detailed Description BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose Transistors NPN Duals These transistors are d...
Datasheet PDF File BC847CDXV6T1 PDF File

BC847CDXV6T1
BC847CDXV6T1

Overview
BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications.
They are housed in the SOT-563 which is designed for low power surface mount applications.
• Lead-Free Solder Plating MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC847 45 50 6.
0 100 BC848 30 30 5.
0 100 Unit V V V 1 6 54 2 3 http://onsemi.
com (3) (2) (1) Q1 Q2 (4) (5) BC847CDXV6T1 (6) mAdc SOT-563 CASE 463A PLASTIC THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range 1.
FR-4 @ Minimum Pad RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.
9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.
0 (Note 1) 250 (Note 1) - 55 to +150 Unit mW mW/°C °C/W 1G D MARKING DIAGRAMS 1L D 1G = BC847CDXV6T1, BC847CDXV6T5 1L = BC848CDXV6T1, BC848CDXV6T5 D = Date Code Symbol PD Unit mW mW/°C °C/W °C ORDERING INFORMATION Device BC847CDXV6T1 BC847CDXV6T5 Package SOT-563 SOT-563 Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel BC848CDXV6T1 BC848CDXV6T5 SOT-563 SOT-563 © Semiconductor Components Industries, LLC, 2003 1 March, 2003 - Rev.
0 Publication Order Number: BC847CDXV6T1/D BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 mA) Collector - Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector - Base Breakdown Voltage (IC = 10 mA) Emitter - Base Breakdown Voltage (IE = 1.
0 mA) Collector Cuto...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)