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HY57V281620ELT

Part Number	HY57V281620ELT
Manufacturer	Hynix Semiconductor
Description	Synchronous DRAM Memory
Published	Sep 26, 2005
Detailed Description	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History...
Datasheet	HY57V281620ELT PDF File

Overview

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No.
1.
0 1.
1 First Version Release 1.
Corrected PIN ASSIGNMENT A12 to NC History Draft Date Dec.
2004 Jan.
2005 Remark This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev.
1.
1 / Jan.
2005 1 Synchronous DRAM Memory 128Mbit (8Mx16bit) HY57V281620E(L)T(P) Series DESCRIPTION The Hynix HY57V281620E(L)T(P) series is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O a...

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