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IRFR3711

International Rectifier
Part Number IRFR3711
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 27, 2005
Detailed Description PD- 94061 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Teleco...
Datasheet PDF File IRFR3711 PDF File

IRFR3711
IRFR3711

Overview
PD- 94061 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.
5V VGS l Fully Characterized Avalanche Voltage and Current l IRFR3711 IRFU3711 HEXFET® Power MOSFET VDSS 20V RDS(on) max 6.
5mΩ ID 110A„ D-Pak IRFR3711 I-Pak IRFU3711 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation… Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max.
20 ± 20 110 „ 69 „ 440 2.
5 120 0.
96 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)… Junction-to-Ambient Typ.
––– ––– ––– Max.
1.
04 50 110 Units °C/W Notes  through „ are on page 10 www.
irf.
com 1 2/7/01 IRFR/U3711 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min.
20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.
0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ.
––– 0.
022 5.
2 6.
7 ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 6.
5 VGS = 10V, ID = 15A ƒ mΩ 8.
5 VGS = 4.
5V, ID = 12A ƒ 3.
0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, T J = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(of...


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