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SSM3J01F

Part Number	SSM3J01F
Manufacturer	Toshiba Semiconductor
Description	Silicon P-Channel MOSFET
Published	Sep 28, 2005
Detailed Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F SSM3J01F High Speed Switching Applications Unit: ...
Datasheet	SSM3J01F PDF File

Overview

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.
4 Ω (max) (VGS = −4 V) : Ron = 0.
6 Ω (max) (VGS = −2.
5 V) • Low gate threshold voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) VDS VGSS ID IDP PD −30 V ±10 V −700 mA −1400 200 mW Channel temperature Storage temperature range Tch 150 °C Tstg −55~150 °C JEDEC TO-236MOD Note: Using continuously under heavy loads (e.
g.
the application of high JEITA SC-59 temperature/cu...

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