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IRFR120N

Part Number	IRFR120N
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Sep 28, 2005
Detailed Description	PD - 91365B IRFR/U120N HEXFET® Power MOSFET l l l l l Surface Mount (IRFR120N) Straight Lead (IRFU120N) Advanced Proce...
Datasheet	IRFR120N PDF File

Overview

PD - 91365B IRFR/U120N HEXFET® Power MOSFET l l l l l Surface Mount (IRFR120N) Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.
21Ω ID = 9.
4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave solde...

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