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IRFR13N15D

International Rectifier
Part Number IRFR13N15D
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 28, 2005
Detailed Description PD - 93905A SMPS MOSFET Applications High frequency DC-DC converters IRFR13N15D IRFU13N15D HEXFET® Power MOSFET l VD...
Datasheet PDF File IRFR13N15D PDF File

IRFR13N15D
IRFR13N15D

Overview
PD - 93905A SMPS MOSFET Applications High frequency DC-DC converters IRFR13N15D IRFU13N15D HEXFET® Power MOSFET l VDSS 150V RDS(on) max 0.
18Ω ID 14A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current D-Pak IRFR13N15D I-Pak IRFU13N15D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
14 9.
8 56 86 0.
57 ± 30 3.
8 -55 to + 175 300 (1.
6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Active Clamp Forward Converter Notes  through … are on page 10 www.
irf.
com 1 6/29/00 IRFR13N15D/IRFU13N15D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
150 ––– ––– 3.
0 ––– ––– ––– ––– Typ.
––– 0.
17 ––– ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA † 0.
18 Ω VGS = 10V, ID = 8.
3A „ 5.
5 V VDS = VGS, ID = 250µA 25 VDS = 150V, VGS = 0V µA 250 VDS = 120V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output ...


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