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STP7NB60

ST Microelectronics
Part Number STP7NB60
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published Oct 1, 2005
Detailed Description STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 ...
Datasheet PDF File STP7NB60 PDF File

STP7NB60
STP7NB60

Overview
STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.
2 Ω < 1.
2 Ω ID 7.
2 A 4.
1 A TYPICAL RDS(on) = 1.
0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching character...


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