DatasheetsPDF.com

TH58NVG1S3AFT05

Part Number	TH58NVG1S3AFT05
Manufacturer	Toshiba Semiconductor
Description	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Published	Oct 6, 2005
Detailed Description	TH58NVG1S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2GBIT (256M u 8BITS) CMOS NAND E2PRO...
Datasheet	TH58NVG1S3AFT05 PDF File

Overview

TH58NVG1S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2GBIT (256M u 8BITS) CMOS NAND E2PROM DESCRIPTION The TH58NVG1S3A is a single 3.
3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks.
The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages).
The TH58NVG1S3A is a serial-type memory device which utilizes the I/O pins for both address and data ...

Similar Datasheet

TH58NVG1S3AFT05 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)