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TC58NS256DC

Part Number	TC58NS256DC
Manufacturer	Toshiba Semiconductor
Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM
Published	Oct 7, 2005
Detailed Description	TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M × 8 BITS) CMOS NAND E PROM...
Datasheet	TC58NS256DC PDF File

Overview

TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M × 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia DESCRIPTION 2 TM ) The TC58NS256 is a single 3.
3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks.
The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.
The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).
The TC58NS256 is a serial-type memory device which utilizes the I/O pins for both...

Similar Datasheet

TC58NS256BDC 256 MBit CMOS NAND EPROM - Toshiba
TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM - Toshiba Semiconductor

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