HEXFET Power MOSFET
Description
Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.176 Ω (Typ.)
IRLM120A
BVDSS = 100 V RDS(on) = 0.22 Ω ID = 2.3 A
SOT-223
2 1 3
1. Gate 2. Drain 3. Source
Absolute...
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