HEXFET Power MOSFET
Description
Advanced Power MOSFET
FEATURES
ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 100V ν Lower RDS(ON) : 0.336 Ω (Typ.)
IRLM110A
BVDSS = 100 V RDS(on) = 0.44 Ω ID = 1.5 A
SOT-223
2 1 3
1. Gate 2. Drain 3. Source
Absolute...
International Rectifier
IRLM110A PDF File
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