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IRFM214B

Fairchild Semiconductor
Part Number IRFM214B
Manufacturer Fairchild Semiconductor
Description 250V N-Channel MOSFET
Published Oct 27, 2005
Detailed Description IRFM214B November 2001 IRFM214B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field...
Datasheet PDF File IRFM214B PDF File

IRFM214B
IRFM214B

Overview
IRFM214B November 2001 IRFM214B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features • • • • • 0.
64A, 250V, RDS(on) = 2.
0Ω @VGS = 10 V Low gate charge ( typical 8.
1 nC) Low Crss ( typical 7.
5 pF) Fast switching Improved dv/dt capability D D ! " S G G! ! "...


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