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MSA-1023

Hewlett-Packard
Part Number MSA-1023
Manufacturer Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Published Nov 16, 2005
Detailed Description Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1023 Features • High Output Power: +27 dBm Typical P1dB a...
Datasheet PDF File MSA-1023 PDF File

MSA-1023
MSA-1023

Overview
Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1023 Features • High Output Power: +27 dBm Typical P1dB at 1.
0␣ GHz • Low Distortion: 37 dBm Typical IP3 at 1.
0␣ GHz • 8.
5 dB Typical Gain at 1.
0␣ GHz • Hermetic, Metal/Beryllia Stripline Package • Impedance Matched to 25 Ω for Push-Pull Configurations This MMIC is designed for use in a push-pull configuration in a 25␣ Ω system.
The MSA-1023 can also be used as a single-ended amplifier in a 50␣ Ω system with slightly reduced performance.
Typical applications include narrow and broadband RF amplifiers in industrial and military systems.
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor for temperature and current stability also allows bias flexibility.
230 mil BeO Flange Package Description The MSA-1023 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, BeO flange package for good thermal characteristics.
Typical Push-Pull Biasing Configuration R bias VCC > 20 V RFC C block 1 50 Ω 1 MSA 4 C block MSA IN 3 2 4 3 C block RFC VCC > 20 V R bias Vd = 15 V 50 Ω OUT C block 2 5965-9554E 6-446 MSA-1023 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 425 mA 7.
0 W +25 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 15°C/W Notes: 1.
Permanent damage may occur if any of these limits are exceeded.
2.
TCASE = 25°C.
3.
Derate at 66.
7 mW/°C for TC > 95°C.
4.
The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods.
See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C Symbol GP ∆ GP f3 dB VSWR NF...


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