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TC58FVB160A

Toshiba Semiconductor
Part Number TC58FVB160A
Manufacturer Toshiba Semiconductor
Description TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Published Nov 17, 2005
Detailed Description TC58FVT160/B160AFT/AXB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2M × 8 BITS / 1M × 16 B...
Datasheet PDF File TC58FVB160A PDF File

TC58FVB160A
TC58FVB160A

Overview
TC58FVT160/B160AFT/AXB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2M × 8 BITS / 1M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160A is a 16,777,216-bit, 3.
0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits.
The TC58FVT160/B160A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors.
The commands are based on the JEDEC standard.
The Program and Erase operations are automatically executed in the chip.
FEATURES • • • • Power supply voltage VDD = 2.
7 V~3.
6 V Operating temperature Ta = −40°C~85°C Organization 2M × 8 bits / 1M × 16 bits Functions Auto Program, Auto Erase Fast Program Mode Program Suspend/Resume Erase Suspend/Resume data polling / Toggle bit block protection Automatic Sleep, support for hidden ROM area common flash memory interface (CFI) Byte/Word Modes • • • • • • Block erase architecture 1 × 16 Kby...


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