DatasheetsPDF.com

SI6820DQ

Vishay Siliconix
Part Number SI6820DQ
Manufacturer Vishay Siliconix
Description N-Channel Reduced Qg / MOSFET with Schottky Diode
Published Nov 24, 2005
Detailed Description Si6820DQ Vishay Siliconix N-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on)...
Datasheet PDF File SI6820DQ PDF File

SI6820DQ
SI6820DQ

Overview
Si6820DQ Vishay Siliconix N-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.
160 @ VGS = 4.
5 V 0.
260 @ VGS = 3.
0 V ID (A) "1.
9 "1.
5 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 VF (v) Diode Forward Voltage 0.
5 V @ 1 A IF (A) 1.
5 D K TSSOP-8 D S S G 1 2 3 4 Top View D 8 K A A A S A G Si6820DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM Limit 20 20 "12 "1.
9 "1.
5 "8 1.
0 1.
5 30 1.
2 0.
76 1.
0 0.
64 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a Device MOSFET Schottky MOSFET Schottky Symbol Typical Maximum 105 125 Unit RthJA Maximum Junction-to-Ambient (t = steady state)a 115 130 _C/W Notes a.
Surface Mounted on FR4 Board.
b.
t v 10 sec.
Document Number: 70790 S-56936—Rev.
C, 23-Nov-98 www.
vishay.
com S FaxBack 408-970-5600 2-1 Si6820DQ Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.
5 V VGS = 4.
5 V, ID = 1.
9 A VGS = 3.
0 V, ID = 1.
5 A VDS = 15 V, ID = 1.
9 A IS = 1.
0 A, VGS = 0 V 6 0.
085 0.
115 5 0.
77...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)