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SI6821DQ

Vishay Siliconix
Part Number SI6821DQ
Manufacturer Vishay Siliconix
Description P-Channel Reduced Qg / MOSFET with Schottky Diode
Published Nov 24, 2005
Detailed Description Si6821DQ New Product Vishay Siliconix P-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V)...
Datasheet PDF File SI6821DQ PDF File

SI6821DQ
SI6821DQ

Overview
Si6821DQ New Product Vishay Siliconix P-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.
190 @ VGS = –4.
5 V 0.
280 @ VGS = –3.
0 V ID (A) "1.
7 "1.
3 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 VF (V) Diode Forward Voltage 0.
5 V @ 1 A IF (A) 1.
5 S K TSSOP-8 D S S G 1 2 3 4 Top View D 8 K A A A D A G Si6821DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM Limit –20 20 "12 "1.
7 "1.
3 "8 –1.
0 1.
5...


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