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STP4NB30FP

ST Microelectronics
Part Number STP4NB30FP
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published Dec 1, 2005
Detailed Description N-CHANNEL 300V - 1.8Ω - 4A - TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP4NB30 STP4NB30FP s s s s s STP4NB30 STP4NB30FP ...
Datasheet PDF File STP4NB30FP PDF File

STP4NB30FP
STP4NB30FP

Overview
N-CHANNEL 300V - 1.
8Ω - 4A - TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP4NB30 STP4NB30FP s s s s s STP4NB30 STP4NB30FP VDSS 300 V 300 V RDS(on) <2Ω <2Ω ID 4A 4A TYPICAL RDS(on) = 1.
8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switchin...


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