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K4S1G0732B-TC75

Part Number	K4S1G0732B-TC75
Manufacturer	Samsung semiconductor
Description	SDRAM stacked 1Gb B-die
Published	Dec 23, 2005
Detailed Description	SDRAM stacked 1Gb B-die (x8) CMOS SDRAM stacked 1Gb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung E...
Datasheet	K4S1G0732B-TC75 PDF File

Overview

SDRAM stacked 1Gb B-die (x8) CMOS SDRAM stacked 1Gb B-die SDRAM Specification Revision 1.
1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.
1 February 2004 SDRAM stacked 1Gb B-die (x8) Revision History Revision 1.
0 (August, 2003) - First release.
Revision 1.
1 (February, 2004) -Corrected typo.
CMOS SDRAM Rev.
1.
1 February 2004 SDRAM stacked 1Gb B-die (x8) 32M x 8Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8) -.
Burst type (Sequential & In...

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K4S1G0732B-TC75 SDRAM stacked 1Gb B-die - Samsung semiconductor

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